PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIH4-N2 MIXTURES

被引：28

作者：

WATANABE, H ^{[1
]}

KATOH, K ^{[1
]}

IMAGI, SI ^{[1
]}

机构：

[1] STANLEY ELECTR CO LTD,RES & DEV LAB,MIDORI KU,YOKOHAMA 227,JAPAN

来源：

THIN SOLID FILMS | 1986年 / 136卷 / 01期

关键词：

D O I：

10.1016/0040-6090(86)90110-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：77 / 83

页数：7

共 18 条

[1] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES [J].

CHOW, R ;

LANFORD, WA ;

WANG, KM ;

ROSLER, RS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5630-5633

[2] CHARACTERIZATION OF PLASMA SILICON-NITRIDE LAYERS [J].

CLAASSEN, WAP ;

VALKENBURG, WGJN ;

HABRAKEN, FHPM ;

TAMMINGA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) :2419-2423

[3] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].

DUN, H ;

PAN, P ;

WHITE, FR ;

DOUSE, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563

[4] COMPOSITION AND CHEMICAL-BONDS IN SILICON-NITRIDE BY SIH4-N2 GAS-MIXTURE PLASMA CVD [J].

FUJITA, S ;

ZHOU, NS ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L100-L102

[5] PROPERTIES OF AMMONIA-FREE NITROGEN-SI3N4 FILMS PRODUCED AT LOW-TEMPERATURES [J].

GERETH, R ;

SCHERBER, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) :1248-&

[6] R F PLASMA DEPOSITION OF SILICON-NITRIDE LAYERS [J].

HELIX, MJ ;

VAIDYANATHAN, KV ;

STREETMAN, BG ;

DIETRICH, HB ;

CHATTERJEE, PK .

THIN SOLID FILMS, 1978, 55 (01) :143-148

[7] HYDROGEN-RELATED MEMORY TRAPS IN THIN SILICON-NITRIDE FILMS [J].

KAPOOR, VJ ;

BAILEY, RS ;

STEIN, HJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :600-607

[8] EFFECTS OF DOPING LEVELS AT SOURCE AND DRAIN REGIONS ON THE PERFORMANCE OF A-SI FET [J].

KATOH, K ;

IMAGI, S ;

WATANABE, H .

ELECTRONICS LETTERS, 1984, 20 (25-2) :1064-1065

[9] AMORPHOUS-SILICON FET ARRAY FOR LCD PANEL [J].

KATOH, K ;

YASUI, M ;

KUNIYASU, S ;

WATANABE, H .

ELECTRONICS LETTERS, 1983, 19 (14) :506-507

[10] AMORPHOUS-SILICON SILICON-NITRIDE FIELD-EFFECT TRANSISTORS [J].

KATOH, K ;

YASUI, M ;

WATANABE, H .

ELECTRONICS LETTERS, 1982, 18 (14) :599-600

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