UNIFORMITY OF THRESHOLD VOLTAGE FOR MESFETS FABRICATED ON VGF GAAS SUBSTRATES

被引：3

作者：

REYNOLDS, CL ^{[1
]}

GIBSON, WC ^{[1
]}

CLEMANS, JE ^{[1
]}

机构：

[1] AT&T ENGN RES CTR,PRINCETON,NJ 08540

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 23期

关键词：

D O I：

10.1049/el:19870851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1222 / 1223

页数：2

共 17 条

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