NUMBER OF OXYGEN-ATOMS IN A THERMAL DONOR IN SILICON

被引：16

作者：

SCHRODER, DK

CHEN, CS

KANG, JS

SONG, XD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.340481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：136 / 141

页数：6

共 27 条

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[16]

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[19] THERMAL DONORS IN SILICON - OXYGEN CLUSTERS OR SELF-INTERSTITIAL AGGREGATES [J].

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[20] SELF-INTERSTITIALS AND THERMAL DONOR FORMATION IN SILICON - NEW MEASUREMENTS AND A MODEL FOR THE DEFECTS [J].

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