ION-IMPLANTED SEMICONDUCTOR-DEVICES

被引：42

作者：

LEE, DH

MAYER, JW

机构：

[1] CALTECH, DEPT ELECT ENGN, PASADENA, CA 91109 USA

[2] HUGHES RES LABS, MALIBU, CA 90265 USA

来源：

PROCEEDINGS OF THE IEEE | 1974年 / 62卷 / 09期

关键词：

D O I：

10.1109/PROC.1974.9603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1241 / 1255

页数：15

共 129 条

[41] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&

[42] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J].

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :295-+

[43]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[44] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

HARRIS, JS ;

MAYER, JW ;

EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[45]

Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[46]

HOFKER WK, 1973, ION IMPLANTATION SEM

[47] ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET [J].

HSIEH, CM ;

MATHEWS, JR ;

SEIDEL, HD ;

PICKAR, KA ;

DRUM, CM .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :238-240

[48] CHARACTERISTICS OF P-CHANNEL MOS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J].

HSWE, M ;

SHOPBELL, ML ;

MAI, CC ;

PALMER, RB .

SOLID-STATE ELECTRONICS, 1972, 15 (11) :1237-+

[49]

Hunsperger R. G., 1970, Radiation Effects, V6, P263, DOI 10.1080/00337577008236305

[50] GAAS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J].

HUNSPERGER, RG ;

HIRSCH, N .

ELECTRONICS LETTERS, 1973, 9 (25) :577-578

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