ION-IMPLANTED SEMICONDUCTOR-DEVICES

被引：42

作者：

LEE, DH

MAYER, JW

机构：

[1] CALTECH, DEPT ELECT ENGN, PASADENA, CA 91109 USA

[2] HUGHES RES LABS, MALIBU, CA 90265 USA

来源：

PROCEEDINGS OF THE IEEE | 1974年 / 62卷 / 09期

关键词：

D O I：

10.1109/PROC.1974.9603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1241 / 1255

页数：15

共 129 条

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MOLINE, RA .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3553-&

[72] ION-IMPLANTED SCHOTTKY-BARRIER GATE FIELD-EFFECT TRANSISTOR [J].

MOLINE, RA ;

GIBSON, WC ;

HECK, LD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :317-320

[73] ION-IMPLANTED HYPERABRUPT JUNCTION VOLTAGE VARIABLE CAPACITORS [J].

MOLINE, RA ;

FOXHALL, GF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :267-+

[74] SELF-ALIGNED MASKLESS CHAN STOPS FOR IGFET INTEGRATED-CIRCUITS [J].

MOLINE, RA ;

REUTLINGER, GW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (12) :1129-1132

[75]

MOLINE RA, 1971, 2ND P INT C ION IMPL, P58

[76]

MOLINE RA, 5 P INT C AT COLL SO

[77] FORMATION OF AMORPHOUS SILICON BY ION-BOMBARDMENT AS A FUNCTION OF ION, TEMPERATURE, AND DOSE [J].

MOREHEAD, FF ;

CROWDER, BL ;

TITLE, RS .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1112-&

[78]

Morgan D.V., 1973, CHANNELING THEORY OB

[79]

MULLER H, 1973, ION IMPLANTATION SEM

[80]

MULLER H, 1971, 2 INT C ION IMPL SEM, P85

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