ION-IMPLANTED SEMICONDUCTOR-DEVICES

被引：42

作者：

LEE, DH

MAYER, JW

机构：

[1] CALTECH, DEPT ELECT ENGN, PASADENA, CA 91109 USA

[2] HUGHES RES LABS, MALIBU, CA 90265 USA

来源：

PROCEEDINGS OF THE IEEE | 1974年 / 62卷 / 09期

关键词：

D O I：

10.1109/PROC.1974.9603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1241 / 1255

页数：15

共 129 条

[31]

Eisen FH, 1971, ION IMPLANTATION

[32] PROPERTIES OF A SINGLE-LEVEL SURFACE STATE INDUCED BY BE IMPLANTATION INTO SI-SIO2 INTERFACES [J].

FAHRNER, W ;

GOETZBERGER, A .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :725-727

[33]

FAHRNER W, 1971, 2 P INT C ION IMPL S, P373

[34] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].

FAIR, RB ;

WEBER, GR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :273-279

[35]

FAIRFIELD JM, 1969, T METALL SOC AIME, V245, P469

[36] ELECTRON-BEAM FABRICATION OF ION-IMPLANTED HIGH-PERFORMANCE FET CIRCUITS [J].

FANG, F ;

HATZAKIS, M ;

TING, CH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06) :1082-1085

[37] ION-IMPLANTED X-BAND IMPATT-TRAPATT BACK-TO-BACK DIODES [J].

FONG, TT ;

YING, RS ;

LEE, DH .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :1044-1045

[38] N-CHANNEL ION-IMPLANTED ENHANCEMENT-DEPLETION FET CIRCUIT AND FABRICATION TECHNOLOGY [J].

FORBES, L .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (03) :226-230

[39] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

WOLFE, CM ;

DONNELLY, JP .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[40] OPTICAL WAVEGUIDING IN PROTON-IMPLANTED GAAS [J].

GARMIRE, E ;

STOLL, H ;

YARIV, A ;

HUNSPERGER, RG .

APPLIED PHYSICS LETTERS, 1972, 21 (03) :87-+

← 1 2 3 4 5 6 7 8 9 10 →