CONTACT RESISTIVITY OF SILICON SILICIDE STRUCTURES FORMED BY THIN-FILM REACTIONS

被引：17

作者：

FINETTI, M ^{[1
]}

GUERRI, S ^{[1
]}

NEGRINI, P ^{[1
]}

SCORZONI, A ^{[1
]}

SUNI, I ^{[1
]}

机构：

[1] TECH RES CTR FINLAND,SF-02150 ESPOO 15,FINLAND

来源：

THIN SOLID FILMS | 1985年 / 130卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(85)90294-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：37 / 45

页数：9

共 22 条

[1] MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF THIN PTSI FILMS AND THEIR RELATIONSHIPS TO DEPOSITION PARAMETERS [J].

ANDERSON, RM ;

REITH, TM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1337-1347

[2] THERMAL-STABILITY AND ELECTRICAL-RESISTIVITY OF N-14-IMPLANTED NICKEL CONTACTS ON N+-SI [J].

BANWELL, T ;

NICOLET, MA ;

SCOTT, DM .

THIN SOLID FILMS, 1983, 107 (01) :67-71

[3] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[4]

BINDELL JB, 1980, IEEE T ELECTRON DEV, V27, P420, DOI 10.1109/T-ED.1980.19878

[5] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[6] DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS [J].

CHERN, JGJ ;

OLDHAM, WG .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :178-180

[7] AL-0.9-PERCENT SI SI OHMIC CONTACTS TO SHALLOW JUNCTIONS [J].

COHEN, SS ;

GILDENBLAT, G ;

GHEZZO, M ;

BROWN, DM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1335-1338

[8] PLATINUM SILICIDE OHMIC CONTACTS TO SHALLOW JUNCTIONS IN SILICON [J].

COHEN, SS ;

PIACENTE, PA ;

GILDENBLAT, G ;

BROWN, DM .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8856-8862

[9] LATERAL CURRENT CROWDING EFFECTS ON CONTACT RESISTANCE MEASUREMENTS IN 4 TERMINAL RESISTOR TEST PATTERNS [J].

FINETTI, M ;

SCORZONI, A ;

SONCINI, G .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :524-526

[10]

Kellner W., 1975, Siemens Forschungs- und Entwicklungsberichte, V4, P137

← 1 2 3 →