AUTODOPING OF GAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY ON SILICON SUBSTRATES

[1] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2] MOCVD N-TYPE DOPING OF GAAS AND GAALAS USING SILICON AND SELENIUM AND FABRICATION OF DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 453 - 460

[3] MOCVD GROWTH AND CHARACTERIZATION BY RAMAN-SCATTERING, X-RAY-DIFFRACTION AND AUGER-SPECTROSCOPY OF SHORT-PERIOD GAAS/ALAS AND GAAS/GA1-XALXAS SUPERLATTICES [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 546 - 552

[4] UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 318 - 324

[5] GRENIER ME, 1984, APPL PHYS LETT, V44, P750

[6] TYPE CONVERSION NEAR THE P-SI SUBSTRATE SURFACE BY GROWING GAAS ON SI SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1266 - 1270

[7] PASCAL P, 1965, NOUVEAU TRAITE CHIMI, V7

[8] HETEROINTERFACE STABILITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 682 - 684

[9] THICKNESS DEPENDENCE OF MATERIAL QUALITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 775 - 783

[10] EPITAXIAL GAAS GROWN DIRECTLY ON (100)SI BY LOW-PRESSURE MOVPE USING LOW-TEMPERATURE PROCESSING [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 503 - 508

[1] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2] MOCVD N-TYPE DOPING OF GAAS AND GAALAS USING SILICON AND SELENIUM AND FABRICATION OF DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 453 - 460

[3] MOCVD GROWTH AND CHARACTERIZATION BY RAMAN-SCATTERING, X-RAY-DIFFRACTION AND AUGER-SPECTROSCOPY OF SHORT-PERIOD GAAS/ALAS AND GAAS/GA1-XALXAS SUPERLATTICES [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 546 - 552

[4] UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 318 - 324

[5] GRENIER ME, 1984, APPL PHYS LETT, V44, P750

[6] TYPE CONVERSION NEAR THE P-SI SUBSTRATE SURFACE BY GROWING GAAS ON SI SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1266 - 1270

[7] PASCAL P, 1965, NOUVEAU TRAITE CHIMI, V7

[8] HETEROINTERFACE STABILITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 682 - 684

[9] THICKNESS DEPENDENCE OF MATERIAL QUALITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 775 - 783

[10] EPITAXIAL GAAS GROWN DIRECTLY ON (100)SI BY LOW-PRESSURE MOVPE USING LOW-TEMPERATURE PROCESSING [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 503 - 508