SEPARATE CONTACTLESS MEASUREMENT OF THE BULK LIFETIME AND THE SURFACE RECOMBINATION VELOCITY BY THE HARMONIC OPTICAL-GENERATION OF THE EXCESS CARRIERS

被引:38
作者
OTAREDIAN, T [1 ]
机构
[1] DELFT UNIV TECHNOL,DEPT ELECT ENGN,ELECTR INSTRUMENTAT LAB,2600 GA DELFT,NETHERLANDS
关键词
D O I
10.1016/0038-1101(93)90134-C
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
One of the main problems in measuring the lifetime is how to distinguish the bulk and surface contributions to the total recombination process. The lifetime measured by any method is not only affected by bulk but also by surface recombination processes. Various methods have been suggested, such as immersing, the sample in the HF solution, or measuring the fundamental lifetime on wafers which are identical except for the thickness. A microwave lifetime measurement method has been used at a frequency of 2.8 GHz in which the reflected microwave power is proportional to the average excess concentration over the whole thickness of the sample. The advantage of the harmonic generation method and analysis of the amplitude and phase of the reflected microwaves, is that it not only is highly accurate, but also gives the bulk lifetime and the surface recombination velocities at the front and back surfaces separately.
引用
收藏
页码:153 / 162
页数:10
相关论文
共 26 条
[1]   FLYING-SPOT SCANNING FOR THE SEPARATE MAPPING OF RESISTIVITY AND MINORITY-CARRIER LIFETIME IN SILICON [J].
BLEICHNER, H ;
NORDLANDER, E ;
FIEDLER, G ;
TOVE, PA .
SOLID-STATE ELECTRONICS, 1986, 29 (08) :779-786
[2]   NONDESTRUCTIVE LIFETIME MEASUREMENT IN SILICON-WAFERS BY MICROWAVE REFLECTION [J].
BORREGO, JM ;
GUTMANN, RJ ;
JENSEN, N .
SOLID-STATE ELECTRONICS, 1987, 30 (02) :195-203
[3]  
Carslaw H. S., 1947, OPERATIONAL METHODS
[4]   CHARACTERIZATION OF GAAS AND SI BY A MICROWAVE PHOTOCONDUCTANCE TECHNIQUE [J].
CUMMINGS, KD ;
PEARTON, SJ ;
VELLACOLEIRO, GP .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1676-1680
[5]  
GUPTA S, 1987, SOLID STATE ELECT, V31, P1401
[6]   DETERMINATION OF DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY BY LIGHT EXCITATION [J].
HU, C ;
DROWLEY, C .
SOLID-STATE ELECTRONICS, 1978, 21 (07) :965-968
[8]   THEORY OF DIFFUSION CONSTANT RECOMBINATION, LIFETIME RECOMBINATION AND SURFACE RECOMBINATION VELOCITY - MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE [J].
KAMM, JD ;
BERNT, H .
SOLID-STATE ELECTRONICS, 1978, 21 (07) :957-964
[9]   THEORY OF LIFETIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - TRANSIENT ANALYSIS [J].
KUIKEN, HK .
SOLID-STATE ELECTRONICS, 1976, 19 (06) :447-450
[10]   ANALYSIS OF THE INTERACTION OF A LASER-PULSE WITH A SILICON-WAFER - DETERMINATION OF BULK LIFETIME AND SURFACE RECOMBINATION VELOCITY [J].
LUKE, KL ;
CHENG, LJ .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2282-2293