ZONE-MELTING RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON FILMS ON FUSED-SILICA SUBSTRATES USING RF-HEATED CARBON SUSCEPTOR

被引：13

作者：

KOBAYASHI, Y

FUKAMI, A

SUZUKI, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 05期

关键词：

D O I：

10.1109/EDL.1983.25677

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：132 / 134

页数：3

共 10 条

[1] MOSFETS IN ELECTRON-BEAM RECRYSTALLIZED POLYSILICON [J].

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ELECTRON DEVICE LETTERS, 1981, 2 (12) :313-315

[2] EFFECT OF HEAT-TREATMENT ON RESIDUAL-STRESS AND ELECTRON HALL-MOBILITY OF LASER ANNEALED SILICON-ON-SAPPHIRE [J].

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SUZUKI, T .

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[3] 101-STAGE-2 MU-M GATE RING OSCILLATORS IN LASER-GROWN SILICON ISLANDS EMBEDDED IN SIO2 [J].

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NISHIKAWA, A .

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[4]

Lam H. W., 1980, International Electron Devices Meeting. Technical Digest, P559

[5] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].

MABY, EW ;

GEIS, MW ;

LECOZ, YL ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

ANTONIADIS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (10) :241-243

[6] EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS [J].

NG, KK ;

CELLER, GK ;

POVILONIS, EI ;

FRYE, RC ;

LEAMY, HJ ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1981, 2 (12) :316-318

[7] SUBGRAIN BOUNDARIES IN LATERALLY SEEDED SILICON-ON-OXIDE FORMED BY GRAPHITE STRIP HEATER RECRYSTALLIZATION [J].

PINIZZOTTO, RF ;

LAM, HW ;

VAANDRAGER, BL .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :388-390

[8] GRAIN-GROWTH OF POLYCRYSTALLINE SILICON FILMS ON SIO2 BY CW SCANNING ELECTRON-BEAM ANNEALING [J].

SHIBATA, K ;

INOUE, T ;

TAKIGAWA, T ;

YOSHII, S .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :645-647

[9] LASER-INDUCED LATERAL, VERTICALLY-SEEDED EPITAXIAL REGROWTH OF DEPOSITED SI FILMS OVER VARIOUS SIO2 PATTERNS [J].

TAMURA, M ;

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TOKUYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :193-198

[10] STRESS-ENHANCED CARRIER MOBILITY IN ZONE-MELTING RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO-2-COATED SUBSTRATES [J].

TSAUR, BY ;

FAN, JCC ;

GEIS, MW .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :322-324

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