GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHOD

被引：11

作者：

CHENG, HC ^{[1
]}

WU, IC ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT MAT SCI & ENGN,HSINCHU 300,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.97652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：174 / 176

页数：3

共 14 条

[1]

CHANG TR, UNPUB

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TU, KN .

THIN SOLID FILMS, 1982, 93 (1-2) :135-141

[3]

CHEN LJ, 1986, MATER RES SOC S P, V54, P245

[4] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111) [J].

LIEHR, M ;

SCHMID, PE ;

LEGOUES, FK ;

HO, PS .

PHYSICAL REVIEW LETTERS, 1985, 54 (19) :2139-2142

[5]

SAITOH S, 1980, APPL PHYS LETT, V37, P223

[6] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J].

TUNG, RT ;

GIBSON, JM ;

POATE, JM .

PHYSICAL REVIEW LETTERS, 1983, 50 (06) :429-432

[7] GROWTH OF SINGLE-CRYSTAL EPITAXIAL SILICIDES ON SILICON BY THE USE OF TEMPLATE LAYERS [J].

TUNG, RT ;

GIBSON, JM ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :888-890

[8] EPITAXIAL SILICIDES [J].

TUNG, RT ;

POATE, JM ;

BEAN, JC ;

GIBSON, JM ;

JACOBSON, DC .

THIN SOLID FILMS, 1982, 93 (1-2) :77-90

[9] CONTROL OF A NATURAL PERMEABLE COSI2 BASE TRANSISTOR [J].

TUNG, RT ;

LEVI, AFJ ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :635-637

[10] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111) [J].

TUNG, RT ;

BEAN, JC ;

GIBSON, JM ;

POATE, JM ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :684-686

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