ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF IMPLANTED AND CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON

被引：5

作者：

LAFERLA, A ^{[1
]}

PRIOLO, F ^{[1
]}

SPINELLA, C ^{[1
]}

RIMINI, E ^{[1
]}

BAROETTO, F ^{[1
]}

FERLA, G ^{[1
]}

机构：

[1] SGS THOMSON, CATANIA, ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90794-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：311 / 317

页数：7

共 27 条

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