EFFECT OF ION-IMPLANTATION ON OXIDE CHARGE STORAGE IN MOS DEVICES

被引:8
作者
WANG, ST [1 ]
ROYCE, BSH [1 ]
RUSSELL, TJ [1 ]
机构
[1] PRINCETON UNIV,MAT LAB,PRINCETON,NJ 08540
关键词
D O I
10.1109/TNS.1975.4328099
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2168 / 2173
页数:6
相关论文
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