共 14 条
EFFECT OF ION-IMPLANTATION ON OXIDE CHARGE STORAGE IN MOS DEVICES
被引:8
作者:

WANG, ST
论文数: 0 引用数: 0
h-index: 0
机构:
PRINCETON UNIV,MAT LAB,PRINCETON,NJ 08540 PRINCETON UNIV,MAT LAB,PRINCETON,NJ 08540

ROYCE, BSH
论文数: 0 引用数: 0
h-index: 0
机构:
PRINCETON UNIV,MAT LAB,PRINCETON,NJ 08540 PRINCETON UNIV,MAT LAB,PRINCETON,NJ 08540

RUSSELL, TJ
论文数: 0 引用数: 0
h-index: 0
机构:
PRINCETON UNIV,MAT LAB,PRINCETON,NJ 08540 PRINCETON UNIV,MAT LAB,PRINCETON,NJ 08540
机构:
[1] PRINCETON UNIV,MAT LAB,PRINCETON,NJ 08540
关键词:
D O I:
10.1109/TNS.1975.4328099
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
引用
收藏
页码:2168 / 2173
页数:6
相关论文
共 14 条
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HOLMESSIEDLE, AG
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GROOMBRIDGE, I
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ROYCE, BSH
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HARARI, E
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WANG, S
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ROYCE, BSH
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PRINCETON UNIV,SOLID STATE & MAT LAB,PRINCETON,NJ 08540 PRINCETON UNIV,SOLID STATE & MAT LAB,PRINCETON,NJ 08540

ROYCE, BSH
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h-index: 0
机构:
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BAXTER, RD
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机构: USN,RES LAB,WASHINGTON,DC 20390

PHILLIPS, B
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JOHNSON, NM
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JOHNSON, WC
论文数: 0 引用数: 0
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LAMPERT, MA
论文数: 0 引用数: 0
h-index: 0
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KILLIANY, JM
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BAKER, WD
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机构:
USN,RES LAB,WASHINGTON,DC 20375 USN,RES LAB,WASHINGTON,DC 20375

SAKS, NS
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BARBE, DF
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机构:
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PERKINS, CW
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AUBUCHON, KG
论文数: 0 引用数: 0
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DILL, HG
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POWELL, RJ
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DERBENWICK, GF
论文数: 0 引用数: 0
h-index: 0