CHARACTERIZATION OF SI-N FILMS PREPARED BY REACTIVE ION-BEAM SPUTTERING

被引：4

作者：

AGGARWAL, MD

ASHOK, S

FONASH, SJ

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 03期

关键词：

D O I：

10.1007/BF02654685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：491 / 504

页数：14

共 18 条

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