THRESHOLD VOLTAGE SHIFT OF N-CHANNEL SI-GATE MOSFETS

被引：5

作者：

HORIUCHI, S ^{[1
]}

机构：

[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 11期

关键词：

D O I：

10.1109/T-ED.1975.18265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1038 / 1043

页数：6

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