TI-W ALLOY INTERACTION WITH SILICON IN THE PRESENCE OF PTSI

被引:10
作者
NAVA, F
NOBILI, C
FERLA, G
IANNUZZI, G
QUEIROLO, G
CELOTTI, G
机构
[1] SGS,I-20041 AGRATE,ITALY
[2] CNR,INST LAMEL,I-40126 BOLOGNA,ITALY
关键词
D O I
10.1063/1.332359
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2434 / 2440
页数:7
相关论文
共 28 条
[1]  
BABCOCK S, UNPUB J APPL PHYS
[2]   ALTERNATIVE MARKER EXPERIMENT IN FORMATION OF MO AND W SILICIDES [J].
BAGLIN, J ;
DHEURLE, F ;
PETERSSON, S .
APPLIED PHYSICS LETTERS, 1978, 33 (04) :289-290
[3]   THERMAL ANNEALING STUDY OF AU-TI-W METALLIZATION ON SILICON [J].
BAKER, JE ;
BLATTNER, RJ ;
NADEL, S ;
EVANS, CA ;
NOWICKI, RS .
THIN SOLID FILMS, 1980, 69 (01) :53-62
[4]   GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].
BOWER, RW ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&
[5]   INTER-DIFFUSION AND COMPOUND FORMATION IN THE C-SI/PTSI/(TI-W)/A1 SYSTEM [J].
CANALI, C ;
CELOTTI, G ;
FANTINI, F ;
ZANONI, E .
THIN SOLID FILMS, 1982, 88 (01) :9-23
[6]   IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].
CHU, WK ;
LAU, SS ;
MAYER, JW ;
MULLER, H .
THIN SOLID FILMS, 1975, 25 (02) :393-402
[7]   GROWTH-RATES FOR PT2SI AND PTSI FORMATION UNDER UHV AND CONTROLLED IMPURITY ATMOSPHERES [J].
CRIDER, CA ;
POATE, JM .
APPLIED PHYSICS LETTERS, 1980, 36 (06) :417-419
[8]   CORROSION RESISTANCE OF SEVERAL INTEGRATED-CIRCUIT METALLIZATION SYSTEMS [J].
CUNNINGHAM, JA ;
FULLER, CR ;
HAYWOOD, CT .
IEEE TRANSACTIONS ON RELIABILITY, 1970, R 19 (04) :182-+
[9]  
DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517
[10]   INTERACTION OF EVAPORATED PALLADIUM AND TITANIUM FILMS WITH SINGLE-CRYSTAL SILICON [J].
FINSTAD, TG ;
NICOLET, MA .
THIN SOLID FILMS, 1980, 68 (02) :393-405