EVIDENCE FOR THE NEUTRAL CHARGE STATE MODEL OF THE DX CENTER FROM LOW-TEMPERATURE HALL-MOBILITY MEASUREMENTS

被引：7

作者：

LEITH, GA ^{[1
]}

ZUKOTYNSKI, S ^{[1
]}

SPRINGTHORPE, AJ ^{[1
]}

机构：

[1] BELL NORTHERN RES LTD,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 20期

关键词：

D O I：

10.1063/1.106952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of the Hall mobility on DX center occupancy in a sample of Si-doped Al0.3Ga0.7As is measured at 40 K. The occupancy of the DX centers is adjusted by means of the persistent photoconductivity effect. The theoretical mobility is calculated for both the neutral and negative charge state models of the DX center. The calculation includes the effect of dynamic screening, and uses values of the impurity concentrations measured by both Hall effect and secondary ion mass spectroscopy. The experimental results are found to be in much better agreement with the neutral charge state model.

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页码：2517 / 2519

页数：3

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共 20 条

[1] EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS - REPLY [J].

CHADI, DJ ;

CHANG, KJ ;

WALUKIEWICZ, W .

PHYSICAL REVIEW LETTERS, 1989, 62 (16) :1923-1923

[2] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW B, 1989, 39 (14) :10063-10074

[3] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[4] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[5] EVIDENCE FOR NEGATIVELY CHARGED DX-CENTER IN SI-DOPED ALGAAS FROM PERSISTENT PHOTOCONDUCTIVITY MEASUREMENTS [J].

DIAS, IFL ;

DEOLIVEIRA, AG ;

BEZERRA, JC ;

MIRANDA, RC ;

GUIMARAES, PSS ;

SAMPAIO, JF ;

CHAVES, AS .

SOLID STATE COMMUNICATIONS, 1991, 77 (05) :327-330

[6] IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J].

HALL, GL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) :1147-&

[7] CONDUCTION IN ILLUMINATED GAAS/ALXGA1-XAS HETEROSTRUCTURES .1. EXPERIMENT [J].

HURD, CM ;

MCALISTER, SP ;

MCKINNON, WR ;

FALT, CE ;

DAY, DJ ;

MINER, CJ ;

SPRINGTHORPE, AJ .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2244-2249

[8] MAGNETIC STUDIES OF PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS [J].

KHACHATURYAN, KA ;

AWSCHALOM, DD ;

ROZEN, JR ;

WEBER, ER .

PHYSICAL REVIEW LETTERS, 1989, 63 (12) :1311-1314

[9] INVESTIGATION OF THE DX CENTER IN HEAVILY DOPED N-TYPE GAAS [J].

MAUDE, DK ;

PORTAL, JC ;

DMOWSKI, L ;

FOSTER, T ;

EAVES, L ;

NATHAN, M ;

HEIBLUM, M ;

HARRIS, JJ ;

BEALL, RB .

PHYSICAL REVIEW LETTERS, 1987, 59 (07) :815-818

[10] EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS [J].

MAUDE, DK ;

EAVES, L ;

FOSTER, TJ ;

PORTAL, JC .

PHYSICAL REVIEW LETTERS, 1989, 62 (16) :1922-1922