INVESTIGATION OF THE AG/INP(110) INTERFACE FORMATION

被引：10

作者：

MAIGNE, P

SEBENNE, CA

TALEBIBRAHIMI, A

机构：

来源：

SURFACE SCIENCE | 1985年 / 162卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(85)90964-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：663 / 670

页数：8

共 10 条

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[3] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J].

BOLMONT, D ;

CHEN, P ;

SEBENNE, CA ;

PROIX, F .

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[4] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

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SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[5] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

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STOFFEL, NG ;

DANIELS, R ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :564-569

[6] METAL INP INTERFACE AND SCHOTTKY DIODE FORMATION [J].

ISMAIL, A ;

PALAU, JM ;

LASSABATERE, L .

REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (03) :205-214

[7]

MAIGNE P, 1985, THESIS U P M CURIE P

[8] SILVER OVERLAYERS ON (110) INDIUM-PHOSPHIDE - FILM GROWTH AND SCHOTTKY-BARRIER FORMATION [J].

MCKINLEY, A ;

PARKE, AW ;

WILLIAMS, RH .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (36) :6723-6736

[9] ANGLE RESOLVED PHOTOELECTRON-SPECTROSCOPY - THE CLEAVED (110) SURFACE OF INDIUM-PHOSPHIDE [J].

MCKINLEY, A ;

SRIVASTAVA, GP ;

WILLIAMS, RH .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (08) :1581-1591

[10] HIGH-RESOLUTION PHOTOEMISSION YIELD AND SURFACE-STATES IN SEMICONDUCTORS [J].

SEBENNE, CA .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02) :768-780

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