DIGITAL TRANSMISSION LINK USING SURFACE-EMITTING LASERS AND PHOTORECEIVERS

被引：7

作者：

DUTTA, NK

NICHOLS, DT

VAKHSHOORI, D

SIVCO, DL

CHO, AY

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.115397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission system experiments using surface emitting lasers (SEL) and integrated photoreceivers have been carried out. The surface emitting laser utilizes proton implantation for current confinement and has a small signal bandwidth of 10 GHz. The p-i-n/modulation doped field effect transistor photoreceiver has a bandwidth of 11 GHz. Bit error rates of less than 10(-9) were demonstrated using the SEL source and the photoreceiver. The receiver sensitivity is -16.5 dBm at 10 Gb/s. (C) 1995 American Institute of Physics.

引用

收藏

页码：588 / 589

页数：2

相关论文

共 14 条

[1] 10-GB/S HIGH-SPEED MONOLITHICALLY INTEGRATED PHOTORECEIVER USING INGAAS P-I-N PD AND PLANAR DOPED INALAS/INGAAS HEMTS [J].

AKAHORI, Y ;

AKATSU, Y ;

KOHZEN, A ;

YOSHIDA, J .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (07) :754-756

[2] 8-ELEMENT LINEAR-ARRAY MONOLITHIC P-I-N MODFET PHOTORECEIVERS USING MOLECULAR-BEAM EPITAXIAL REGROWTH [J].

BERGER, PR ;

DUTTA, NK ;

HUMPHREY, DA ;

SMITH, PR ;

WANG, SJ ;

MONTGOMERY, RK ;

SIVCO, D ;

CHO, AY .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (01) :63-66

[3] EXTENDED TEMPERATURE AND WAVELENGTH PERFORMANCE OF VERTICAL-CAVITY TOP SURFACE-EMITTING LASERS [J].

CATCHMARK, JM ;

MORGAN, RA ;

KOJIMA, K ;

LEIBENGUTH, RE ;

ASOM, MT ;

GUTH, GD ;

FOCHT, MW ;

LUTHER, LC ;

PRZYBYLEK, GP ;

MULLALLY, T ;

CHRISTODOULIDES, DN .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3122-3124

[4] 5.2-GHZ BANDWIDTH MONOLITHIC GAAS OPTOELECTRONIC RECEIVER [J].

HARDER, CS ;

VANZEGHBROECK, B ;

MEIER, H ;

PATRICK, W ;

VETTIGER, P .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :171-173

[5]

HURM V, 1991, UNPUB DEVICE RES C B

[6] SURFACE EMITTING SEMICONDUCTOR-LASERS [J].

IGA, K ;

KOYAMA, F ;

KINOSHITA, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) :1845-1855

[7] VERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION [J].

JEWELL, JL ;

HARBISON, JP ;

SCHERER, A ;

LEE, YH ;

FLOREZ, LT .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1332-1346

[8] REDUCTION OF P-DOPED MIRROR ELECTRICAL-RESISTANCE OF GAAS/ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS BY DELTA-DOPING [J].

KOJIMA, K ;

MORGAN, RA ;

MULLALY, T ;

GUTH, GD ;

FOCHT, MW ;

LEIBENGUTH, RE ;

ASOM, MT .

ELECTRONICS LETTERS, 1993, 29 (20) :1771-1772

[9] 1.2 GBIT/S FULLY INTEGRATED TRANSIMPEDANCE OPTICAL RECEIVER OEIC FOR 1.3-1.55-MU-M TRANSMISSION-SYSTEMS [J].

LEE, WS ;

SPEAR, DAH ;

AGNEW, MJ ;

DAWE, PJG ;

BLAND, SW .

ELECTRONICS LETTERS, 1990, 26 (06) :377-379

[10] MONOLITHIC GAAS/ALGAAS PIN MESFET PHOTORECEIVER USING A SINGLE MOLECULAR-BEAM EPITAXY GROWTH STEP [J].

NICHOLS, D ;

DUTTA, NK ;

BERGER, PR ;

SMITH, PR ;

SIVCO, D ;

CHO, AY .

ELECTRONICS LETTERS, 1993, 29 (12) :1133-1134