AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON

被引:33
作者
IYER, SS
TING, CY
FRYER, PM
机构
[1] IBM, Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, Thomas J. Watson Research Cent, Yorktown Heights, NY, USA
关键词
INTEGRATED CIRCUITS; VLSI - Materials - SEMICONDUCTING SILICON;
D O I
10.1149/1.2114328
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Because of its low resistivity and excellent thermal stability, TiSi//2 is finding widespread application as an interconnect material in novel schemes such as the salicide structure. The Ti-Si reaction is complex and has been studied previously in certain regimes. The authors show that after the commencement of the interfacial reaction, i. e. , after reduction of interfacial oxides, the initial stage of the reaction proceeds rapidly. The extent to which it proceeds depends on the nature of the Ti ambient gas interaction. A final stage of the reaction begins when the silicide phase and the ambient species phase interfere; the reaction then proceeds relatively slowly at a rate depending on the nature of the ambient species.
引用
收藏
页码:2240 / 2245
页数:6
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