DIFFUSION OF ION-IMPLANTED-B IN HIGH-CONCENTRATION P-DOPED AND AS-DOPED SILICON

被引：32

作者：

FAIR, RB ^{[1
]}

PAPPAS, PN ^{[1
]}

机构：

[1] BELL TEL LABS INC,READING,PA 19604

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 09期

关键词：

D O I：

10.1149/1.2134434

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1241 / 1244

页数：4

共 15 条

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[8] CONCENTRATION-DEPENDENT DIFFUSION OF B AND P IN SI [J].

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[9] GALLIUM DIFFUSIONS INTO SILICON AND BORON-DOPED SILICON [J].

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