SOLID-PHASE EPITAXY OF HIGHLY-DOPED SI-B FILMS DEPOSITED ON SI(100) SUBSTRATES

被引：6

作者：

CABER, J ^{[1
]}

ISHIWARA, H ^{[1
]}

FURUKAWA, S ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 11期

关键词：

D O I：

10.1143/JJAP.21.L712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L712 / L714

页数：3

共 11 条

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[6] GROWTH-CONDITIONS OF DEPOSITED SI FILMS IN SOLID-PHASE EPITAXY [J].

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SUGII, T ;

ISHIWARA, H ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L130-L132

[7] REDUCING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION [J].

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[10]

Washburn J., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P209

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