DIFFUSION OF CHROMIUM IN GALLIUM-ARSENIDE

[21] Linh N. T., 1980, Semi-Insulating III-V Materials, P206

[22] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING [J]. APPLIED PHYSICS LETTERS, 1981, 39 (11) : 906 - 908

[23] LOW-TEMPERATURE GETTERING OF CR IN GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 53 - 55

[24] BACK SURFACE GETTERING AND CR OUT-DIFFUSION IN VPE GAAS-LAYERS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 277 - 279

[25] GETTERING OF CR IN GAAS BY BACK SURFACE MECHANICAL DAMAGE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01): : 169 - 172

[26] LOW-TEMPERATURE REDISTRIBUTION OF CR IN BORON-IMPLANTED GAAS IN THE ABSENCE OF ENCAPSULANT STRESS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 635 - 637

[27] MAGEE TJ, 1981, APPL PHYS LETT, V38, P473

[28] CHROMIUM AND TELLURIUM REDISTRIBUTION IN GAAS AND AL0.3GA0.7AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5986 - 5991

[29] HEAT-TREATMENT OF SEMI-INSULATING CHROMIUM-DOPED GALLIUM-ARSENIDE SUBSTRATES WITH CONVERTED SURFACE REMOVED PRIOR TO MOLECULAR-BEAM EXPITAXIAL GROWTH [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 183 - 185

[30] EFFECTS OF CONTACT METALS ON MINORITY-CARRIER DIFFUSION LENGTHS IN GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (02) : 279 - 307

[21] Linh N. T., 1980, Semi-Insulating III-V Materials, P206

[22] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING [J]. APPLIED PHYSICS LETTERS, 1981, 39 (11) : 906 - 908

[23] LOW-TEMPERATURE GETTERING OF CR IN GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 53 - 55

[24] BACK SURFACE GETTERING AND CR OUT-DIFFUSION IN VPE GAAS-LAYERS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 277 - 279

[25] GETTERING OF CR IN GAAS BY BACK SURFACE MECHANICAL DAMAGE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01): : 169 - 172

[26] LOW-TEMPERATURE REDISTRIBUTION OF CR IN BORON-IMPLANTED GAAS IN THE ABSENCE OF ENCAPSULANT STRESS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 635 - 637

[27] MAGEE TJ, 1981, APPL PHYS LETT, V38, P473

[28] CHROMIUM AND TELLURIUM REDISTRIBUTION IN GAAS AND AL0.3GA0.7AS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5986 - 5991

[29] HEAT-TREATMENT OF SEMI-INSULATING CHROMIUM-DOPED GALLIUM-ARSENIDE SUBSTRATES WITH CONVERTED SURFACE REMOVED PRIOR TO MOLECULAR-BEAM EXPITAXIAL GROWTH [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 183 - 185

[30] EFFECTS OF CONTACT METALS ON MINORITY-CARRIER DIFFUSION LENGTHS IN GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (02) : 279 - 307