MONTE-CARLO SIMULATION OF TWO-DIMENSIONAL HOT-ELECTRONS IN N-TYPE SI INVERSION-LAYERS

被引:9
作者
TERASHIMA, K [1 ]
HAMAGUCHI, C [1 ]
TANIGUCHI, K [1 ]
机构
[1] TOSHIBA CORP,KOMUKAI TOSHIBACHO,VLSI RES CTR,KAWASAKI 210,JAPAN
关键词
D O I
10.1016/0749-6036(85)90021-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:15 / 19
页数:5
相关论文
共 17 条
[2]   HIGH-FIELD DRIFT VELOCITY OF SILICON INVERSION LAYERS - MONTE-CARLO CALCULATION [J].
BASU, PK .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :350-353
[3]   HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE [J].
COOPER, JA ;
NELSON, DF .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1445-1456
[4]   FOURIER-ANALYSIS OF MAGNETOPHONON AND 2-DIMENSIONAL SHUBNIKOV-DE HAAS MAGNETORESISTANCE STRUCTURE [J].
EAVES, L ;
HOULT, RA ;
STRADLING, RA ;
TIDEY, RJ ;
PORTAL, JC ;
ASKENAZY, S .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (07) :1034-1053
[5]   HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].
FANG, FF ;
FOWLER, AB .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+
[6]   HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J].
FERRY, DK .
PHYSICAL REVIEW B, 1976, 14 (12) :5364-5371
[7]  
Hamaguchi C., 1983, Japanese Journal of Applied Physics, Supplement, V22, P190
[8]   NON-OHMIC ELECTRON CONDUCTION IN SILICON SURFACE INVERSION LAYERS AT LOW-TEMPERATURES [J].
HESS, K ;
NEUGROSCHEL, A ;
SHIUE, CC ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1721-1727
[9]   HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J].
HESS, K ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1254-1257
[10]   WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS [J].
HESS, K ;
SAH, CT .
PHYSICAL REVIEW B, 1974, 10 (08) :3375-3386