CRACKS IN SILICON DIOXIDE PHOSPHOSILICATE-GLASS SILICON NITRIDE COMPOSITE LAYER ON SILICON SUBSTRATES

被引：4

作者：

MISAWA, Y ^{[1
]}

YAGI, H ^{[1
]}

机构：

[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 07期

关键词：

D O I：

10.1143/JJAP.16.1115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1115 / 1118

页数：4

共 11 条

[1] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

CHU, TL ;

LEE, CH ;

GRUBER, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :717-&

[2] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J].

CHU, TL ;

SZEDON, JR ;

LEE, CH .

SOLID-STATE ELECTRONICS, 1967, 10 (09) :897-&

[3] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].

DEAL, BE ;

FLEMING, PJ ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&

[4] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J].

DOO, VY ;

NICHOLS, DR ;

SILVEY, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1279-&

[5] POLARIZATION OF THIN PHOSPHOSILICATE GLASS FILMS IN MGOS STRUCTURES [J].

ELDRIDGE, JM ;

LAIBOWITZ, RB ;

BALK, P .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) :1922-+

[6] SILICON NITRIDE AS A MASK IN PHOSPHORUS DIFFUSION [J].

FRANZ, I ;

LANGHEINRICH, W .

SOLID-STATE ELECTRONICS, 1969, 12 (12) :955-+

[7] SILICON NITRIDE THIN FILMS FROM SICL4 PLUS NH3 - PREPARATION AND PROPERTIES [J].

GRIECO, MJ ;

WORTHING, FL ;

SCHWARTZ, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) :525-+

[8] DIFFUSION MASKING OF SILICON NITRIDE AND SILICON OXYNITRIDE FILMS ON SI [J].

HEUMANN, FK ;

BROWN, DM ;

METS, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :99-&

[9] STRUCTURAL PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE [J].

KOHLER, WA .

METALLURGICAL TRANSACTIONS, 1970, 1 (03) :735-&

[10]

TOKUYAMA T, 1976, JAPAN J APPL PHYS, V6, P1252

← 1 2 →