MODELING OF SMALL MOS DEVICES AND DEVICE LIMITS

[61] DEVICE DESIGN CONSIDERATIONS FOR ION-IMPLANTED N-CHANNEL MOSFETS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1975, 19 (01) : 50 - 59

[62] A GENERAL 4-TERMINAL CHARGING-CURRENT MODEL FOR THE INSULATED-GATE FIELD-EFFECT TRANSISTOR .1. [J]. SOLID-STATE ELECTRONICS, 1980, 23 (05) : 405 - 410

[63] SABNIS AG, 1979, IEDM TECH DIG, P215

[64] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 651 - 661

[65] SELBERHERR S, 1980, J SOLID STATE CIRCUI, V15, P598

[66] Shichijo H., 1981, International Electron Devices Meeting, P219

[67] SHICHIJO H, UNPUB

[68] SHICHIJO H, 1982, DEVICE RES C FORT A, V2

[69] SHICHIJO H, 1982, UNPUB

[70] Smith G. E., 1980, International Electron Devices Meeting. Technical Digest, P227

[61] DEVICE DESIGN CONSIDERATIONS FOR ION-IMPLANTED N-CHANNEL MOSFETS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1975, 19 (01) : 50 - 59

[62] A GENERAL 4-TERMINAL CHARGING-CURRENT MODEL FOR THE INSULATED-GATE FIELD-EFFECT TRANSISTOR .1. [J]. SOLID-STATE ELECTRONICS, 1980, 23 (05) : 405 - 410

[63] SABNIS AG, 1979, IEDM TECH DIG, P215

[64] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 651 - 661

[65] SELBERHERR S, 1980, J SOLID STATE CIRCUI, V15, P598

[66] Shichijo H., 1981, International Electron Devices Meeting, P219

[67] SHICHIJO H, UNPUB

[68] SHICHIJO H, 1982, DEVICE RES C FORT A, V2

[69] SHICHIJO H, 1982, UNPUB

[70] Smith G. E., 1980, International Electron Devices Meeting. Technical Digest, P227