MODELING OF SMALL MOS DEVICES AND DEVICE LIMITS

[21] DENNARD RH, 1972, DEC IEDM, P168

[22] HOLDING TIME DEGRADATION IN DYNAMIC MOS RAM BY INJECTION-INDUCED ELECTRON CURRENTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) : 1515 - 1519

[23] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 567 - 573

[24] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[25] FICHTNER W, 1979, INT J ELECTRON

[26] FITCHNER A, 1980, IEEE IEDM TECH DIGES, P24

[27] FITCHNER W, 1981, JUN DEV RES C SANT B

[28] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[29] GREENFIELD JA, 1980, J SOLID STATE CIRCUI, V15, P585

[30] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[21] DENNARD RH, 1972, DEC IEDM, P168

[22] HOLDING TIME DEGRADATION IN DYNAMIC MOS RAM BY INJECTION-INDUCED ELECTRON CURRENTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) : 1515 - 1519

[23] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 567 - 573

[24] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[25] FICHTNER W, 1979, INT J ELECTRON

[26] FITCHNER A, 1980, IEEE IEDM TECH DIGES, P24

[27] FITCHNER W, 1981, JUN DEV RES C SANT B

[28] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[29] GREENFIELD JA, 1980, J SOLID STATE CIRCUI, V15, P585

[30] Grove A S, 1967, PHYS TECHNOLOGY SEMI