MODELING OF SMALL MOS DEVICES AND DEVICE LIMITS

[11] Chatterjee P. K., 1980, International Electron Devices Meeting. Technical Digest, P28

[12] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295

[13] CHATTERJEE PK, 1981, UNPUB

[14] CHATTERJEE PK, 1979, IEDM, P14

[15] CHIN D, 1982, DEVICE RES C COLORAD

[16] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 35 - 40

[17] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 520 - 533

[18] Dang R. L. M., 1981, IEEE Electron Device Letters, VEDL-2, P196, DOI 10.1109/EDL.1981.25399

[19] 1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 325 - 333

[20] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[11] Chatterjee P. K., 1980, International Electron Devices Meeting. Technical Digest, P28

[12] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295

[13] CHATTERJEE PK, 1981, UNPUB

[14] CHATTERJEE PK, 1979, IEDM, P14

[15] CHIN D, 1982, DEVICE RES C COLORAD

[16] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 35 - 40

[17] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 520 - 533

[18] Dang R. L. M., 1981, IEEE Electron Device Letters, VEDL-2, P196, DOI 10.1109/EDL.1981.25399

[19] 1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 325 - 333

[20] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268