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[42] CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 980 - 986

[43] LOW-LEVEL CURRENTS IN ION-IMPLANTED MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (12) : 799 - 807

[44] MATSUNAGA J, 1979, 11TH P C INT SOL STA

[45] MEINDL JD, 1981, IEEE ISSCC DIG TECH, P36

[46] Nagel L., 1975, SPICE2 COMPUTER PROG

[47] Neureuther A. R., 1980, International Electron Devices Meeting. Technical Digest, P214

[48] ELECTRON-BEAM RESIST EDGE PROFILE SIMULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 686 - 693

[49] NG KK, 1982, JUN DEV RES C COL

[50] EFFECT OF ELECTRON TRAPPING ON IGFET CHARACTERISTICS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 65 - 76

[41] HOT-ELECTRONS IN MOS-TRANSISTORS - LATERAL DISTRIBUTION OF THE TRAPPED OXIDE CHARGE [J]. ELECTRON DEVICE LETTERS, 1982, 3 (07): : 215 - 217

[42] CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 980 - 986

[43] LOW-LEVEL CURRENTS IN ION-IMPLANTED MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (12) : 799 - 807

[44] MATSUNAGA J, 1979, 11TH P C INT SOL STA

[45] MEINDL JD, 1981, IEEE ISSCC DIG TECH, P36

[46] Nagel L., 1975, SPICE2 COMPUTER PROG

[47] Neureuther A. R., 1980, International Electron Devices Meeting. Technical Digest, P214

[48] ELECTRON-BEAM RESIST EDGE PROFILE SIMULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 686 - 693

[49] NG KK, 1982, JUN DEV RES C COL

[50] EFFECT OF ELECTRON TRAPPING ON IGFET CHARACTERISTICS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 65 - 76