MODELING OF SMALL MOS DEVICES AND DEVICE LIMITS

[51] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[52] HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 273 - 282

[53] NOBLE WP, 1976, IEEE IEDM TECH DIGES, P583

[54] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1359 - 1367

[55] QUADRUPLY SELF-ALIGNED MOS (QSA MOS) - A NEW SHORT-CHANNEL HIGH-SPEED HIGH-DENSITY MOSFET FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1352 - 1358

[56] GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 717 - 722

[57] PANLOS JJ, 1982, IEEE ISSCC TECH DIGE, P238

[58] Papoulis A., 1984, PROBABILITY RANDOM V

[59] RATUAKUMAR KN, 1980, INT SOLID STATE CIRC, P72

[60] RICHMAN P, 1967, CHARACTERISTICS OPER, P50

[51] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[52] HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 273 - 282

[53] NOBLE WP, 1976, IEEE IEDM TECH DIGES, P583

[54] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1359 - 1367

[55] QUADRUPLY SELF-ALIGNED MOS (QSA MOS) - A NEW SHORT-CHANNEL HIGH-SPEED HIGH-DENSITY MOSFET FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1352 - 1358

[56] GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 717 - 722

[57] PANLOS JJ, 1982, IEEE ISSCC TECH DIGE, P238

[58] Papoulis A., 1984, PROBABILITY RANDOM V

[59] RATUAKUMAR KN, 1980, INT SOLID STATE CIRC, P72

[60] RICHMAN P, 1967, CHARACTERISTICS OPER, P50