GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES

被引：225

作者：

CHO, AY

机构：

来源：

THIN SOLID FILMS | 1983年 / 100卷 / 04期

关键词：

D O I：

10.1016/0040-6090(83)90154-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：291 / 317

页数：27

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[61] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[64] SPECTROSCOPY OF DONORS IN HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[65] HIGH-MOBILITY GA0.47IN0.53AS THIN EPITAXIAL LAYERS GROWN BY MBE, VERY CLOSELY LATTICE-MATCHED TO INP
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[66] GROWTH OF GAYIN1-YAS-INP HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
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[67] HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6413 - 6416
[68] TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
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[69] GAAS-MESFETS BY MOLECULAR-BEAM EPITAXY
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 222 - 224
[70] STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY
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