共 91 条
- [11] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703CALAWA, AR
- [12] APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 467 - 470CASEY, HCCHO, AYBARNES, PA
- [13] CASEY HC, 1978, HETEROSTRUCTURE LA B
- [14] DEPLETION MODE MODULATION DOPED AL0.48IN0.52AS-GA0.47IN0.53AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS[J]. ELECTRON DEVICE LETTERS, 1982, 3 (06): : 152 - 155CHEN, CYCHO, AYCHENG, KYPEARSALL, TPOCONNOR, PGARBINSKI, PA
- [15] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER[J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 607 - 609CHENG, KYCHO, AYWAGNER, WR
- [16] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021CHENG, KYCHO, AYWAGNER, WRBONNER, WA
- [17] TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6328 - 6330CHENG, KYCHO, AYWAGNER, WR
- [18] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149CHENG, KYCHO, AYDRUMMOND, TJMORKOC, H
- [19] SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4411 - 4415CHENG, KYCHO, AY
- [20] CHENG LL, 1975, EPITAXIAL GROWTH, P37