NEW SILICON-ON-INSULATOR TECHNOLOGY USING A 2-STEP OXIDATION TECHNIQUE

被引：13

作者：

LIN, TL

WANG, KL

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 17期

关键词：

D O I：

10.1063/1.97435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1104 / 1106

页数：3

共 12 条

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[2]

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APPLIED PHYSICS LETTERS, 1979, 34 (11) :740-741

[7] A NEW SILICON-ON-INSULATOR STRUCTURE USING A SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON POROUS SILICON [J].

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[8]

LIN TL, 1986, APPL PHYS LETT, V48, P1973

[9]

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[10] DIGITAL NMOS TEST CIRCUITS FABRICATED IN SILICON MBE [J].

SWARTZ, RG ;

CHIN, GM ;

VOSHCHENKOV, AM ;

KO, P ;

WOOLEY, BA ;

FINEGAN, SN ;

BOSWORTH, RH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :29-31

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