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AL/SI CONTACT RESISTANCE FOR SUBMICROMETER DESIGN RULES
被引:5
作者
:
FORD, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
FORD, JM
[
1
]
机构
:
[1]
MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1985年
/ 32卷
/ 04期
关键词
:
D O I
:
10.1109/T-ED.1985.22030
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:840 / 842
页数:3
相关论文
共 15 条
[1]
CONTACT RESISTANCE AND CONTACT RESISTIVITY
BERGER, HH
论文数:
0
引用数:
0
h-index:
0
BERGER, HH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(04)
: 507
-
&
[2]
MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
论文数:
0
引用数:
0
h-index:
0
BERGER, HH
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(02)
: 145
-
&
[3]
THERMALLY-INDUCED CHANGES IN BARRIER HEIGHTS OF ALUMINUM CONTACTS TO PARA-TYPE AND NORMAL-TYPE SILICON
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER M60 1QD,ENGLAND
UNIV MANCHESTER INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER M60 1QD,ENGLAND
CARD, HC
[J].
SOLID STATE COMMUNICATIONS,
1975,
16
(01)
: 87
-
89
[4]
SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
FANG, YK
论文数:
0
引用数:
0
h-index:
0
FANG, YK
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(07)
: 541
-
&
[5]
CHEN JY, 1981, SEMICONDUCTOR SILICO, P694
[6]
SIZE EFFECT ON CONTACT RESISTANCE AND DEVICE SCALING
COHEN, SS
论文数:
0
引用数:
0
h-index:
0
COHEN, SS
GILDENBLAT, G
论文数:
0
引用数:
0
h-index:
0
GILDENBLAT, G
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(04)
: 978
-
980
[7]
NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
CROWELL, CR
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
RIDEOUT, VL
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 89
-
&
[8]
A 2-DIMENSIONAL MATHEMATICAL ANALYSIS OF DIFFUSED SEMICONDUCTOR RESISTOR
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
MURLEY, PC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1968,
12
(03)
: 242
-
+
[9]
RESISTANCE INCREASE IN SMALL-AREA SI-DOPED AL-N-SI CONTACTS
MORI, M
论文数:
0
引用数:
0
h-index:
0
MORI, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(02)
: 81
-
86
[10]
CURRENT CROWDING ON METAL CONTACTS TO PLANAR DEVICES
MURRMANN, H
论文数:
0
引用数:
0
h-index:
0
机构:
Siemens Aktiengesellschaft, München
MURRMANN, H
WIDMANN, D
论文数:
0
引用数:
0
h-index:
0
机构:
Siemens Aktiengesellschaft, München
WIDMANN, D
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(12)
: 1022
-
&
←
1
2
→
共 15 条
[1]
CONTACT RESISTANCE AND CONTACT RESISTIVITY
BERGER, HH
论文数:
0
引用数:
0
h-index:
0
BERGER, HH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(04)
: 507
-
&
[2]
MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
论文数:
0
引用数:
0
h-index:
0
BERGER, HH
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(02)
: 145
-
&
[3]
THERMALLY-INDUCED CHANGES IN BARRIER HEIGHTS OF ALUMINUM CONTACTS TO PARA-TYPE AND NORMAL-TYPE SILICON
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER M60 1QD,ENGLAND
UNIV MANCHESTER INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER M60 1QD,ENGLAND
CARD, HC
[J].
SOLID STATE COMMUNICATIONS,
1975,
16
(01)
: 87
-
89
[4]
SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
FANG, YK
论文数:
0
引用数:
0
h-index:
0
FANG, YK
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(07)
: 541
-
&
[5]
CHEN JY, 1981, SEMICONDUCTOR SILICO, P694
[6]
SIZE EFFECT ON CONTACT RESISTANCE AND DEVICE SCALING
COHEN, SS
论文数:
0
引用数:
0
h-index:
0
COHEN, SS
GILDENBLAT, G
论文数:
0
引用数:
0
h-index:
0
GILDENBLAT, G
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(04)
: 978
-
980
[7]
NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
CROWELL, CR
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science, University of Southern California, Los Angeles
RIDEOUT, VL
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 89
-
&
[8]
A 2-DIMENSIONAL MATHEMATICAL ANALYSIS OF DIFFUSED SEMICONDUCTOR RESISTOR
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
MURLEY, PC
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1968,
12
(03)
: 242
-
+
[9]
RESISTANCE INCREASE IN SMALL-AREA SI-DOPED AL-N-SI CONTACTS
MORI, M
论文数:
0
引用数:
0
h-index:
0
MORI, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(02)
: 81
-
86
[10]
CURRENT CROWDING ON METAL CONTACTS TO PLANAR DEVICES
MURRMANN, H
论文数:
0
引用数:
0
h-index:
0
机构:
Siemens Aktiengesellschaft, München
MURRMANN, H
WIDMANN, D
论文数:
0
引用数:
0
h-index:
0
机构:
Siemens Aktiengesellschaft, München
WIDMANN, D
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(12)
: 1022
-
&
←
1
2
→