RECOMBINATION CENTERS IN ALUMINUM-DOPED SILICON DIFFUSED IN HIGH PHOSPHORUS CONCENTRATION

被引：6

作者：

MARCHAND, RL ^{[1
]}

STIVERS, AR ^{[1
]}

SAH, CT ^{[1
]}

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 06期

关键词：

D O I：

10.1063/1.323976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2576 / 2580

页数：5

共 11 条

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