CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF DOPED AND UNDOPED ALGAAS/GAAS HETEROSTRUCTURES

被引：15

作者：

GWO, S

CHAO, KJ

SHIH, CK

机构：

[1] Department of Physics, University of Texas, Austin

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.111140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy (STM) was used to study the (NH4)(2)S-passivated (110) cross-sectional surfaces of both doped and undoped Al0.3Ga0.7As/GaAs heterostructures on n(+)-substrates. The ex situ (NH4)(2)S treatment of the cross-sectional surfaces of heterostructures was found to be very stable against oxidation. STM images showed no appreciable deterioration of surface quality in vacuum after more than 40 days. The spectroscopic results on the undoped epilayer showed diodelike behavior, confirming that an undoped large band gap region can be imaged by STM through carrier injection from the conductive regions.

引用

页码：493 / 495

页数：3

共 16 条

[1] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES
ALBREKTSEN, O
ARENT, DJ
MEIER, HP
SALEMINK, HWM
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (01) : 31 - 33
[2] P2S5 PASSIVATION OF GAAS-SURFACES FOR SCANNING TUNNELING MICROSCOPY IN AIR
DAGATA, JA
TSENG, W
BENNETT, J
SCHNEIR, J
HARARY, HH
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (25) : 3288 - 3290
[3] CROSS-SECTIONAL IMAGING AND SPECTROSCOPY OF GAAS DOPING SUPERLATTICES BY SCANNING TUNNELING MICROSCOPY
FEENSTRA, RM
YU, ET
WOODALL, JM
KIRCHNER, PD
LIN, CL
PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (07) : 795 - 797
[4] FEENSTRA RM, 1993, NATO ADV SCI INST SE, V243, P127
[5] SCANNING TUNNELING MICROSCOPY OF GAAS MULTIPLE PN JUNCTIONS
GWO, S
SMITH, AR
SHIH, CK
SADRA, K
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (09) : 1104 - 1106
[6] SCANNING-TUNNELING-MICROSCOPY OF DOPING AND COMPOSITIONAL III-V HOMOSTRUCTURES AND HETEROSTRUCTURES
GWO, S
CHAO, KJ
SMITH, AR
SHIH, CK
SADRA, K
STREETMAN, BG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1509 - 1513
[7] DIRECT MAPPING OF ELECTRONIC-STRUCTURE ACROSS AL0.3GA0.7AS/GAAS HETEROJUNCTIONS - BAND OFFSETS, ASYMMETRICAL TRANSITION WIDTHS, AND MULTIPLE-VALLEY BAND STRUCTURES
GWO, S
CHAO, KJ
SHIH, CK
SADRA, K
STREETMAN, BG
[J]. PHYSICAL REVIEW LETTERS, 1993, 71 (12) : 1883 - 1886
[8] VOLTAGE-DEPENDENT SCANNING TUNNELING MICROSCOPY IMAGE OF THE GAINAS INP MULTIQUANTUM WELL STRUCTURE
KATO, T
OSAKA, F
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (12) : 5716 - 5720
[9] SHAPE OF THE GAINAS/INP MULTIQUANTUM WELL POTENTIAL OBSERVED BY SCANNING TUNNELING MICROSCOPY
KATO, T
OSAKA, F
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9A): : L1586 - L1587
[10] MOLECULAR-BEAM EPITAXY REGROWTH BY USE OF AMMONIUM SULFIDE CHEMICAL TREATMENTS
MELLOCH, MR
CARPENTER, MS
DUNGAN, TE
LI, D
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (11) : 1064 - 1066

← 1 2 →