VAPOR-DEPOSITION OF HIGH P2O5 CONTENT BINARY PHOSPHOSILICATE FILMS ON SILICON

被引：9

作者：

WONG, J ^{[1
]}

GHEZZO, M ^{[1
]}

机构：

[1] GE,RES & DEV CTR,SCHENECTADY,NY 12301

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 09期

关键词：

D O I：

10.1149/1.2134440

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1268 / 1271

页数：4

共 31 条

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