VAPOR-DEPOSITION OF HIGH P2O5 CONTENT BINARY PHOSPHOSILICATE FILMS ON SILICON

被引：9

作者：

WONG, J ^{[1
]}

GHEZZO, M ^{[1
]}

机构：

[1] GE,RES & DEV CTR,SCHENECTADY,NY 12301

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 09期

关键词：

D O I：

10.1149/1.2134440

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1268 / 1271

页数：4

共 31 条

[21] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J].

PLISKIN, WA ;

CONRAD, EE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) :43-&

[22] EFFECT OF PHOSPHORUS IN SIO2 AS SHOWN BY INFRARED SPECTROSCOPY (SEMICONDUCTOR DEVICE PASSIVICATION - GLASSES E) [J].

PLISKIN, WA .

APPLIED PHYSICS LETTERS, 1965, 7 (06) :158-&

[23] ADVANTAGES OF VAPOR-PLATED PHOSPHOSILICATE FILMS IN LARGE-SCALE INTEGRATED CIRCUIT ARRAYS [J].

SCHLACTER, MM ;

SCHLEGEL, ES ;

KEEN, RS ;

LATHLAEN, RA ;

SCHNABLE, GL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (12) :1077-+

[24] DEPOSITION RATE AND PHOSPHORUS CONCENTRATION OF PHOSPHOSILICATE GLASS-FILMS IN RELATION TO O2-SIH4 + PH3 MOLE FRACTION [J].

SHIBATA, M ;

SUGAWARA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) :155-156

[25] POLARIZATION PHENOMENA AND OTHER PROPERTIES OF PHOSPHOSILICATE GLASS FILMS ON SILICON [J].

SNOW, EH ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :263-&

[26] ETCH RATES OF DOPED OXIDES IN SOLUTIONS OF BUFFERED HF [J].

TENNEY, AS ;

GHEZZO, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) :1091-1095

[27] COMPOSITION OF PHOSPHOSILICATE GLASS BY INFRARED-ABSORPTION [J].

TENNEY, AS ;

GHEZZO, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) :1276-1279

[28] VIBRATIONAL-SPECTRA OF VAPOR-DEPOSITED BINARY BOROSILICATE GLASSES [J].

TENNEY, AS ;

WONG, J .

JOURNAL OF CHEMICAL PHYSICS, 1972, 56 (11) :5516-+

[29]

WINCHELL AN, 1964, MICROSCOPICAL CHARAC, P66

[30] CHEMICAL VAPOR DEPOSITION OF ARSENOSILICATE GLASS - ONE-LIQUID-SOURCE SYSTEM [J].

WONG, J ;

GHEZZO, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1540-+

← 1 2 3 4 →