IONIZATION ENTROPY AND CHARGE-STATE-CONTROLLED METASTABLE DEFECTS IN SEMICONDUCTORS

被引：6

作者：

BRANZ, HM

CRANDALL, RS

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 25期

关键词：

D O I：

10.1063/1.101959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2634 / 2636

页数：3

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