ION-BASED METHODS FOR OPTICAL THIN-FILM DEPOSITION

被引:295
作者
MARTIN, PJ
机构
关键词
D O I
10.1007/BF01144693
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1 / 25
页数:25
相关论文
共 148 条
[31]   SPUTTERED THIN-FILMS FOR INTEGRATED OPTICS [J].
DEITCH, RH ;
WEST, EJ ;
GIALLORENZI, TG ;
WELLER, JF .
APPLIED OPTICS, 1974, 13 (04) :712-715
[32]   PREPARATION AND PROPERTIES OF AL2O3 FILMS BY DC AND RF MAGNETRON SPUTTERING [J].
DESHPANDEY, C ;
HOLLAND, L .
THIN SOLID FILMS, 1982, 96 (03) :265-270
[33]   COLUMNAR MICROSTRUCTURE IN VAPOR-DEPOSITED THIN-FILMS [J].
DIRKS, AG ;
LEAMY, HJ .
THIN SOLID FILMS, 1977, 47 (03) :219-233
[34]   ION-BEAM-INDUCED TEXTURE FORMATION IN VACUUM-CONDENSED THIN METAL-FILMS [J].
DOBREV, D .
THIN SOLID FILMS, 1982, 92 (1-2) :41-53
[35]  
DOBREV DD, 1973, DOKL BOLG AKAD NAUK, V26, P231
[36]   INFLUENCE OF ION-BOMBARDMENT ON PROPERTIES OF VACUUM-EVAPORATED THIN-FILMS [J].
DUDONIS, J ;
PRANEVICIUS, L .
THIN SOLID FILMS, 1976, 36 (01) :117-120
[37]  
EBERT J, 1982, 1982 P SOC PHOT INST, P29
[38]  
ECKSTEIN W, 1979, IPP932 M PLANCK I RE
[39]   INFRARED OPTICAL-PROPERTIES OF ELECTRON-BEAM EVAPORATED SILICON OXYNITRIDE FILMS [J].
ERIKSSON, TS ;
GRANQVIST, CG .
APPLIED OPTICS, 1983, 22 (20) :3204-3206
[40]   REACTIVELY SPUTTERED SILICON OXYNITRIDE AS A DIELECTRIC MATERIAL FOR METAL-INSULATOR-METAL CAPACITORS [J].
FRANK, RI ;
MOBERG, WL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) :524-&