INSIGHT INTO GATE OXIDE THINNING

被引：5

作者：

BELLUTTI, P

LUI, A

机构：

[1] IRST-Istituto per la Ricerca Scientifica e Tecnologica, Material Science/Microelectronics Division

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 03期

关键词：

D O I：

10.1149/1.2054805

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Gate oxide thinning, induced by local selective oxidation, has been studied by using scanning electron microscopy to evaluate the bird's beak cross sections in n- and p-type silicon. Distinct characteristics of the thinned regions show a clear dependence of the gate oxide thinning on both substrate doping concentration and type. The influence of both pad and field oxide thicknesses as well as process temperature have been analyzed.

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收藏

页码：750 / 754

页数：5

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