EPITAXIAL REGROWTH OF AMORPHOUS SI DEPOSITED ON SI(111)

被引：13

作者：

KOROBTSOV, VV

ZAVODINSKII, VG

ZOTOV, AV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 72卷 / 01期

关键词：

D O I：

10.1002/pssa.2210720140

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：391 / 398

页数：8

共 23 条

[1] EPITAXIAL GERMANIUM-SILICON STRUCTURES OBTAINED IN ULTRAHIGH-VACUUM [J].

ALEKSANDROV, LN ;

LOVYAGIN, RN .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (01) :341-352

[2] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J].

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1510-1511

[3]

[Anonymous], 1975, EQUILIBRIUM GEN KINE

[4] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :59-61

[5] RECRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS .2. IMPLANT SPECIES EFFECT [J].

CHRISTODOULIDES, CE ;

BARAGIOLA, RA ;

CHIVERS, D ;

GRANT, WA ;

WILLIAMS, JS .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2) :73-82

[6] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[7] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[8]

Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[9] EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON [J].

FOTI, G ;

BEAN, JC ;

POATE, JM ;

MAGEE, CW .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :840-842

[10] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI [J].

HUNG, LS ;

LAU, SS ;

VONALLMEN, M ;

MAYER, JW ;

ULLRICH, BM ;

BAKER, JE ;

WILLIAMS, P ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :909-911

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