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GENERIC IMPULSE-RESPONSE FUNCTION FOR MOS SYSTEMS AND ITS APPLICATION TO LINEAR RESPONSE ANALYSIS
被引:35
作者
:
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
机构
:
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1988年
/ 35卷
/ 06期
关键词
:
D O I
:
10.1109/23.25436
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1178 / 1185
页数:8
相关论文
共 42 条
[1]
ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2
AUSMAN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
AUSMAN, GA
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
MCLEAN, FB
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(04)
: 173
-
175
[2]
HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
BENEDETTO, JM
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
MCLEAN, FB
MIZE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
MIZE, JP
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1985,
32
(06)
: 3916
-
3920
[3]
DOSE AND ENERGY-DEPENDENCE OF INTERFACE TRAP FORMATION IN CO-60 AND X-RAY ENVIRONMENTS
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
BENEDETTO, JM
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1988,
35
(06)
: 1260
-
1264
[4]
THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
BENEDETTO, JM
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1986,
33
(06)
: 1318
-
1323
[5]
HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
MCLEAN, FB
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
MCGARRITY, JM
AUSMAN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
AUSMAN, GA
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1975,
22
(06)
: 2163
-
2167
[6]
CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
BOESCH, HE
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
MCGARRITY, JM
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1976,
23
(06)
: 1520
-
1525
[7]
TIME-DEPENDENT INTERFACE TRAP EFFECTS IN MOS DEVICES
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Lab, Adelphi, MD, USA
BOESCH, HE
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1988,
35
(06)
: 1160
-
1167
[8]
INTERFACE STATE GENERATION ASSOCIATED WITH HOLE TRANSPORT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
60
(01)
: 448
-
449
[9]
SATURATION OF THRESHOLD VOLTAGE SHIFT IN MOSFETS AT HIGH TOTAL DOSE
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
MCLEAN, FB
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
BENEDETTO, JM
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
MCGARRITY, JM
BAILEY, WE
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
BAILEY, WE
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1986,
33
(06)
: 1191
-
1197
[10]
ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
WINOKUR, PS
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1978,
25
(06)
: 1239
-
1245
←
1
2
3
4
5
→
共 42 条
[1]
ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2
AUSMAN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
AUSMAN, GA
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
MCLEAN, FB
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(04)
: 173
-
175
[2]
HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
BENEDETTO, JM
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
MCLEAN, FB
MIZE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
MIZE, JP
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1985,
32
(06)
: 3916
-
3920
[3]
DOSE AND ENERGY-DEPENDENCE OF INTERFACE TRAP FORMATION IN CO-60 AND X-RAY ENVIRONMENTS
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
BENEDETTO, JM
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1988,
35
(06)
: 1260
-
1264
[4]
THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
BENEDETTO, JM
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1986,
33
(06)
: 1318
-
1323
[5]
HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
MCLEAN, FB
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
MCGARRITY, JM
AUSMAN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
HARRY DIAMOND LABS, ADELPHIA, MD 20782 USA
AUSMAN, GA
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1975,
22
(06)
: 2163
-
2167
[6]
CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
BOESCH, HE
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
MCGARRITY, JM
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1976,
23
(06)
: 1520
-
1525
[7]
TIME-DEPENDENT INTERFACE TRAP EFFECTS IN MOS DEVICES
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Lab, Adelphi, MD, USA
BOESCH, HE
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1988,
35
(06)
: 1160
-
1167
[8]
INTERFACE STATE GENERATION ASSOCIATED WITH HOLE TRANSPORT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
60
(01)
: 448
-
449
[9]
SATURATION OF THRESHOLD VOLTAGE SHIFT IN MOSFETS AT HIGH TOTAL DOSE
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
MCLEAN, FB
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
BENEDETTO, JM
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
MCGARRITY, JM
BAILEY, WE
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN CTR,DALLAS,TX 75265
BAILEY, WE
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1986,
33
(06)
: 1191
-
1197
[10]
ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
WINOKUR, PS
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1978,
25
(06)
: 1239
-
1245
←
1
2
3
4
5
→