PLASMA-ACTIVATED DEPOSITION AND PROPERTIES OF PHOSPHOSILICATE GLASS-FILM

被引：21

作者：

TAKAMATSU, A

SHIBATA, M

SAKAI, H

YOSHIMI, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

10.1149/1.2115980

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1865 / 1870

页数：6

共 14 条

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[4]

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[5]

KERN W, 1976, RCA REV, V37, P3

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[7] COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS [J].

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[8]

SHIBATA M, 1975, J ELECTROCHEM SOC, V122, P157, DOI 10.1149/1.2134147

[9] DEPOSITION RATE AND PHOSPHORUS CONCENTRATION OF PHOSPHOSILICATE GLASS-FILMS IN RELATION TO O2-SIH4 + PH3 MOLE FRACTION [J].

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[10] FILMS FROM THE LOW-TEMPERATURE OXIDATION OF SILANE [J].

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