MODELING THE EFFECT OF ION MIXING AND SURFACE ROUGHENING ON DEPTH PROFILES

被引：5

作者：

TOMPKINS, HG ^{[1
]}

机构：

[1] MOTOROLA INC,AUSTIN,TX 78721

来源：

SURFACE AND INTERFACE ANALYSIS | 1987年 / 10卷 / 2-3期

关键词：

D O I：

10.1002/sia.740100208

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：105 / 109

页数：5

共 18 条

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J].

ANDERSEN, HH .

APPLIED PHYSICS, 1979, 18 (02) :131-140

[2] SPUTTERING IN SURFACE ANALYSIS OF SOLIDS - DISCUSSION OF SOME PROBLEMS [J].

COBURN, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05) :1037-1044

[3] SPUTTER-INDUCED ROUGHNESS IN THERMAL SIO2 DURING AUGER SPUTTER PROFILING STUDIES OF THE SI-SIO2 INTERFACE [J].

COOK, CF ;

HELMS, CR ;

FOX, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :44-46

[4]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[5] INTERPRETATION OF XPS CORE LEVEL SHIFTS AND STRUCTURE OF THIN SILICON-OXIDE LAYERS [J].

FINSTER, J ;

SCHULZE, D ;

BECHSTEDT, F ;

MEISEL, A .

SURFACE SCIENCE, 1985, 152 (APR) :1063-1070

[6] ION-BEAM-INDUCED ATOMIC MIXING [J].

HAFF, PK ;

SWITKOWSKI, ZE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3383-3386

[7]

HENZEL R, 1982, RAD EFF, V65, P101

[8] EFFECTS OF ENHANCED DIFFUSION ON PREFERRED SPUTTERING OF HOMOGENEOUS ALLOY SURFACES [J].

HO, PS .

SURFACE SCIENCE, 1978, 72 (02) :253-263

[9] AUGER STUDY OF PREFERRED SPUTTERING ON BINARY ALLOY SURFACES [J].

HO, PS ;

LEWIS, JE ;

WILDMAN, HS ;

HOWARD, JK .

SURFACE SCIENCE, 1976, 57 (01) :393-405

[10] DECONVOLUTION METHOD FOR COMPOSITION PROFILING BY AUGER SPUTTERING TECHNIQUE [J].

HO, PS ;

LEWIS, JE .

SURFACE SCIENCE, 1976, 55 (01) :335-348

← 1 2 →