HEAVILY ARSENIC-DOPED SILICON EPITAXIAL-FILMS GROWN BY PARTIALLY IONIZED MBE

被引：14

作者：

SUGIYAMA, T ^{[1
]}

ITOH, T ^{[1
]}

机构：

[1] WASEDA UNIV,SCH SCI & ENGN,TOKYO 160,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期

关键词：

D O I：

10.1149/1.2108628

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：604 / 609

页数：6

共 19 条

[1] A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE [J].

CHOU, S ;

DAVIDSON, LA ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1970, 17 (01) :23-&

[2] ANTIMONY CONCENTRATION IN SILICON EPITAXIAL LAYER FORMED BY PARTIALLY IONIZED VAPOR-DEPOSITION [J].

ITOH, T ;

NAKAMURA, T ;

MUROMACHI, M ;

SUGIYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) :1145-1146

[3]

Itoh T., 1971, Radiation Effects, V9, P1, DOI 10.1080/00337577108242022

[4] P-TYPE DOPING IN SI MOLECULAR-BEAM EPITAXY BY COEVAPORATION OF BORON [J].

KUBIAK, RAA ;

LEONG, WY ;

PARKER, EHC .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :878-880

[5] SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING [J].

LIETOILA, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :532-534

[6] THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J].

LIETOILA, A ;

GIBBONS, JF ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :765-768

[7] DISSOCIATION PRESSURE OF GALLIUM ARSENIDE [J].

LYONS, VJ ;

SILVESTRI, VJ .

JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (07) :1275-&

[8] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[9] NORMAL-TYPE DOPING TECHNIQUES IN SILICON MOLECULAR-BEAM EPITAXY BY SIMULTANEOUS ARSENIC ION-IMPLANTATION AND BY ANTIMONY EVAPORATION [J].

OTA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) :1761-1765

[10] SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING [J].

OTA, Y .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1102-1110

← 1 2 →