P-CHANNEL MODULATION-DOPED GASB FIELD-EFFECT TRANSISTORS

被引：11

作者：

LUO, LF

LONGENBACH, KF

WANG, WI

机构：

[1] Department of Electrical Engineering, Columbia University, New York

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 05期

关键词：

TRANSISTORS; FIELD-EFFECT TRANSISTORS;

D O I：

10.1049/el:19910297

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaSb p-channel modulation-doped field-effect transistors based on a p-AlSb0.9As0.1/p-AlSb/GaSb structure have been fabricated. Transconductances as high as 50 ms/mm at room temperature and 220 to 283 ms/mm at 77 K were obtained for 1-mu-m gate-length devices. These 77 K transconductances represent the highest values reported for any compound p-channel heterojunction field-effect transistors.

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页码：472 / 474

页数：3

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