CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON FROM SILANE AT LOW-TEMPERATURES .2. PLASMA ENHANCED DEPOSITION

被引：23

作者：

COMFORT, JH ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 08期

关键词：

D O I：

10.1149/1.2097381

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2398 / 2405

页数：8

相关论文

共 20 条

[11] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
LUCOVSKY, G
RICHARD, PD
TSU, DV
LIN, SY
MARKUNAS, RJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 681 - 688
[12] EFFECT OF ION-BOMBARDMENT ON INITIAL-STAGES OF THIN-FILM GROWTH
MARINOV, M
[J]. THIN SOLID FILMS, 1977, 46 (03) : 267 - 274
[13] NONEQUILIBRIUM BORON DOPING EFFECTS IN LOW-TEMPERATURE EPITAXIAL SILICON FILMS
MEYERSON, BS
LEGOUES, FK
NGUYEN, TN
HARAME, DL
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 113 - 115
[14] LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION
MEYERSON, BS
GANIN, E
SMITH, DA
NGUYEN, TN
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1232 - 1235
[15] PONS M, 1980, VIDE COUCHES MINCES, V200, P3
[16] SHANFIELD SR, 1983, MAY EL SOC SAN FRANC, V831, P230
[17] SILICON EPITAXY BY PLASMA DISSOCIATION OF SILANE
SUZUKI, S
TAKAI, H
OKUDA, H
ITOH, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 647 - 651
[18] EPITAXIAL-GROWTH OF SI-GE LAYERS ON SI SUBSTRATES BY PLASMA DISSOCIATION OF SIH4 AND GEH4 MIXTURE
SUZUKI, S
ITOH, T
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6385 - 6389
[19] SUZUKI S, 1979, 11TH P C 1979 INT SO
[20] EPITAXIAL-GROWTH OF SILICON FROM SIH4 IN TEMPERATURE-RANGE 800-1150 DEGREES C
TOWNSEND, WG
UDDIN, ME
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (01) : 39 - 42