THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON LAYER DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .5. SPECIAL FEATURES OF DOPING WITH ARSENIC IN THE RANGE OF SMALL LAYER GROWTH-RATES

被引：5

作者：

KUHNE, H

MORGENSTERN, T

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 08期

关键词：

D O I：

10.1002/crat.2170220802

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：989 / 997

页数：9

共 17 条

[1]

BLOEM J, 1979, J CRYST GROWTH, V13, P302

[2]

HERRING RB, 1979, FAL EL SOC M LOS ANG

[3] DECOMPOSITION EQUILIBRIUM OF ARSINE AND LOW-PRESSURE DOPING OF EPITAXIAL CVD SILICON [J].

KOKOVIN, GA ;

TESTOVA, NA ;

TITOV, AA ;

MORGENSTERN, T ;

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1985, 20 (12) :1583-1593

[4] THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .1. EMPIRICAL FOUNDATIONS AND PROCESS-CONTROLLING EQUATIONS [J].

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (04) :487-494

[5] THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON LAYER DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .4. THE PROBLEM OF MORE-THAN-ONE KIND OF DOPANT SPECIES [J].

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (07) :883-892

[6] THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .3. THE LAW OF EPITAXIAL LAYER DOPING AND ITS LIMITATION [J].

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (06) :767-776

[7] THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .2. THEORETICAL FOUNDATIONS AND INCORPORATION EQUATIONS [J].

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (05) :669-676

[8] TEMPERATURE-DEPENDENCE OF DOPING ELEMENT INCORPORATION WITH THE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON .5. INCORPORATION OF ARSENIC [J].

KUHNE, H ;

SPERLING, R .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (04) :403-411

[9] KINETICS OF THE INCORPORATION OF DOPANTS INTO EPITAXIAL CVD SILICON [J].

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (10) :1217-1225

[10] INCORPORATION OF DOPANTS INTO EPITAXIAL CVD-SILICON LAYERS AND INCORPORATION EQUILIBRIUM [J].

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (11) :1379-1387

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