CHARGE TRANSPORT PHENOMENA IN MOS SYSTEM

被引:6
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OHWADA, A
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10.1143/JJAP.6.65
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O59 [应用物理学];
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页码:65 / +
页数:1
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共 10 条
[1]   STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].
ATALLA, MM ;
TANNENBAUM, E ;
SCHEIBNER, EJ .
BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03) :749-783
[2]   STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J].
KERR, DR ;
LOGAN, JS ;
BURKHARDT, PJ ;
PLISKIN, WA .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :376-&
[3]   EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES [J].
KERR, DR .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :385-&
[4]   SEMICONDUCTOR SURFACE VARACTOR [J].
LINDNER, R .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03) :803-+
[5]   HYDROGEN-INDUCED SURFACE SPACE-CHARGE REGIONS IN OXIDE-PROTECTED SILICON [J].
OLMSTEAD, J ;
SCOTT, J ;
KUZNETZOFF, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :104-+
[7]   ELECTROCHEMICAL PHENOMENA IN THIN FILMS OF SILICON DIOXIDE ON SILICON [J].
SERAPHIM, DP ;
BRENNEMANN, AE ;
FRIEDMAN, HL ;
DHEURLE, FM .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :400-+
[8]   ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].
SNOW, EH ;
GROVE, AS ;
DEAL, BE ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1664-&
[9]  
THOMAS JE, 1964, IBM J, V8, P369
[10]   CHARGE STORAGE EFFECTS IN SILICON DIOXIDE FILMS [J].
YAMIN, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :88-+